A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications. especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 °C. The presented system includes a front-end amplifying the sen... https://www.spidertattooz.com/Venture-Pouch/